? semiconductor components industries, llc, 2017 april, 2017 ? rev. 3 1 publication order number: ncp51199/d ncp51199, ncv51199 ddr 2-amp source / sink v tt termination regulator the ncp/ncv51199 is a linear regulator designed to supply a regulated v tt termination voltage for ddr?2 and ddr?3 memory applications. the regulator is capable of actively sourcing and sinking 2 a peak currents for ddr?2, and ddr?3 up to 1.5 a while regulating the v tt output voltage to within 10 mv. the output termination voltage is regulated to track v ddq / 2 by two external voltage divider resistors connected to the pv cc , gnd, and v ref pins. the ncp/ncv51199 incorporates a high?speed differential amplifier to provide ultra?fast response to line and load transients. other features include source/sink current limiting, soft?start and on?chip thermal shutdown protection. features ? supports ddr?2 v tt termination to 2 a, ddr?3 to 1.5 a (peak) ? stable with 10 f ceramic capacitance on v tt output ? integrated power mosfets ? high accuracy v tt output at full?load ? fast transient response ? built?in soft?start ? shutdown for standby or suspend mode ? integrated thermal and current?limit protection ? ncv prefix for automotive and other applications requiring unique site and control change requirements; aec?q100 qualified and ppap capable ? these devices are pb?free and are rohs compliant typical applications ? sdram termination voltage for ddr?2 / ddr?3 ? motherboard, notebook, and vga card memory termination ? set top box, digital tv, printers marking diagram www. onsemi.com soic8?nb ep pd suffix case 751bu nc v tt 18 nc vref v cc gnd nc pvcc pin connection xxxxxx = specific device code a = assembly location l = wafer lot y = year ww = work week = pb?free package soic?8 ep 1 8 xxxxxx alyw 1 8 see detailed ordering, marking and shipping information in the package dimensions section on page 6 of this data sheet. ordering information
ncp51199, ncv51199 www. onsemi.com 2 c1 = 1 f (low esr) c4 = 1000 f + 10 f (10 f ceramic) c2 = 470 f (low esr) r3 = optional v tt discharge resistor c3 = 47 f n?ch mosfet = optional enable / disable figure 1. application diagram ncp51199 pv cc gnd v ref v cc v tt c2 1 2 3 6 4 c4 c3 5 v r3 c1 r1 100k r2 100k enable pv cc = 1.5 to 5.0 v* *for ddr2: pv cc = 1.8 v, v tt = 0.9 v ddr3: pv cc = 1.5 v, v tt = 0.75 v v tt = 0.75 to 2.5 v* pin function description pin no. pin name description 1 pv cc input voltage which supplies current to the output pin. c in = 470 f with low esr. 2 gnd common ground 3 v ref buffered reference voltage input equal to ? of v ddq and active low shutdown pin. an external resistor divider dividing down the pv cc voltage creates the regulated output voltage. pulling the pin to ground (0.15 v maximum) turns the device off. 4 v tt regulator output voltage capable of sourcing and sinking current while regulating the output rail. c out = 1000 f + 10 f ceramic with low esr. 5 nc true no connect 6 v cc the v cc pin is a 5 v input pin that provides internal bias to the controller. pv cc should always be kept lower or equal to v cc . 7 nc true no connect 8 nc true no connect ep thermal pad pad for thermal connection. the exposed pad must be connected to the ground plane using multiple vias for maximum power dissipation performance.
ncp51199, ncv51199 www. onsemi.com 3 absolute maximum ratings rating symbol value unit input supply voltage range (v cc pv cc ) (note 1) pv cc , v cc ?0.3 to 6 v output voltage range v tt ?0.3 to 6 v reference input range v ref ?0.3 to 6 v maximum junction temperature t j(max) 125 c storage temperature range tstg ?65 to 150 c esd capability, human body model (note 2) esdhbm 2 kv esd capability, machine model (note 2) esdmm 150 v lead temperature soldering reflow (smd styles only), pb?free versions (note 3) t sld 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. refer to electrical characteristics and application information for safe operating area. 2. this device series incorporates esd protection and is tested by the following methods: esd human body model tested per aec?q100?002 (eia/jesd22?a114) esd machine model tested per aec?q100?003 (eia/jesd22?a115) latchup current maximum rating: 150 ma per jedec standard: jesd78 3. for information, please refer to our soldering and mounting techniques reference manual, solderrm/d thermal characteristics rating symbol value unit thermal characteristics, so8?ep (note 4) thermal resistance, junction?to?air (note 5) power rating at 25 c ambient = 1.19 w, derate 12 mw/ c thermal reference, junction?to?lead2 (note 5) r ja r jl 84 20 c/w 4. refer to electrical characteristis and application information for safe operating area. 5. values based on copper area of 645 mm 2 (or 1 in 2 ) of 1 oz copper thickness and fr4 pcb substrate. operating ranges (note 6) rating symbol min max unit input voltage pv cc 1.5 5.5 v bias supply voltage v cc 4.75 5.25 v ambient temperature t a ?40 85 c junction temperature t j ?40 125 c 6. refer to electrical characteristics and application information for safe operating area.
ncp51199, ncv51199 www. onsemi.com 4 electrical characteristics pv cc = 1.8 v / 1.5 v; v cc = 5 v; v ref = 0.9 v / 0.75 v; c out = 10 f (ceramic); t a = +25 c, unless otherwise noted. parameter test conditions symbol min typ max unit regulator output output offset voltage i out = 0 a v os ?20 ? +20 mv load regulation v ref = 900 mv, i out = 1.8 a, pv cc = 1.8 v v ref = 750 mv, i out = 1.4 a, pv cc = 1.5 v reg load ?10 ? +10 mv input and standby currents bias supply current i out = 0 a i bias ? 0.8 2.5 ma standby current v ref < 0.2 v (shutdown), r load = 180 i stb ? 1 90 a current limit protection current limit pv cc = 1.8 v, v ref = 0.9 v i lim 2.0 ? 3.5 a pv cc = 1.5 v, v ref = 0.75 v 1.5 ? 3.5 shutdown thresholds shutdown threshold voltage enable v ih 0.6 ? ? v shutdown v il ? ? 0.15 thermal shutdown thermal shutdown temperature v cc = 5 v t sd 160 168 176 c thermal shutdown hysteresis v cc = 5 v t sh 35 35 40 c
ncp51199, ncv51199 www. onsemi.com 5 typical characteristics figure 2. output voltage vs. temperature temperature ( c) 100 75 50 125 25 0 ?25 ?50 0.880 0.885 0.890 0.895 0.900 0.905 0.910 0.915 output voltage (v) pv cc = 1.8 v, v cc = 5 v figure 3. output voltage vs. temperature temperature ( c) 100 75 50 125 25 0 ?25 ?50 0.730 0.735 0.740 0.745 0.755 0.760 0.765 0.770 output voltage (v) pv cc = 1.5 v, v cc = 5 v 0.750 figure 4. shutdown threshold vs. temperature temperature ( c) 100 125 75 50 25 0 ?25 ?50 0.20 0.25 0.30 0.35 0.40 0.50 0.55 0.60 shutdown threshold (v) 0.45 v cc = 5 v figure 5. v cc current vs. temperature figure 6. pv cc current vs. temperature temperature ( c) temperature ( c) 100 75 50 125 25 0 ?25 ?50 0.2 0.4 0.6 0.8 1.0 1.2 100 75 50 125 25 0 ?25 ?50 0 0.5 1.0 1.5 2.0 2.5 3.0 figure 7. source current limits vs. temperature temperature ( c) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v cc current (ma) pv cc current (ma) source current limit (a) pv cc = 1.8 v, v cc = 5 v pv cc = 1.8 v, v cc = 5 v 100 75 50 125 25 0 ?25 ?50 enabled shutdown pv cc = 1.8 v, v cc = 5 v pv cc = 1.5 v, v cc = 5 v
ncp51199, ncv51199 www. onsemi.com 6 typical characteristics figure 8. sink current limits vs. temperature temperature ( c) sink current limit (a) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 75 50 125 25 0 ?25 ?50 pv cc = 1.8 v, v cc = 5 v pv cc = 1.5 v, v cc = 5 v figure 9. 1.25 v, 1.6 a transient response time (100 sec / div) ?20 ?15 ?5 0 5 10 15 20 v tt , transient response (mv) ?10 table 1. ordering information device marking package shipping ? ncp51199pdr2g 51199 soic?8 (pb-free) 2500 / tape & reel ncv51199pdr2g* v51199 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *ncv prefix for automotive and other applications requiring unique site and control change requirements; aec?q100 qualified and ppap capable.
ncp51199, ncv51199 www. onsemi.com 7 package dimensions soic8?nb ep case 751bu issue e seating plane b notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b does not include dambar protrusion. allowable protrusion shall be 0.10mm in excess of maximum material condition. 4. dimension d does not include mold flash, protrusions, or gate burrs. mold flash, protrusions, or gate burrs shall not exceed 0.15mm per side. dimension e does not include interlead flash or protrusion. interlead flash or protrusion shall not exceed 0.25mm per side. dimensions d and e are determined at datum f. 5. dimensions a and b are to be determined at datum f. 6. a1 is defined as the vertical distance from the seating plane to the lowest point on the package body. 7. tab contour may vary minimally to include tooling features. a dim min max millimeters g 1.55 2.39 a 1.35 1.75 b 0.31 0.51 e 1.27 bsc a1 0.00 0.10 b1 0.28 0.48 h 0.25 0.50 c m 0.25 dimension: millimeters *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* l2 0.25 bsc a top view c 0.20 a-b d c 0.10 note 5 c 0.10 b 8x b c 8x side view end view detail a 7.00 8x 1.52 8x 0.76 1.27 pitch recommended 1 l f seating plane detail a d l2 a1 c note 6 1 4 5 8 c 0.10 a-b note 5 e note 7 f g bottom view 2.60 2.60 c 0.17 0.25 l 0.40 1.27 2x note 4 2x 4 tips c 0.10 2x note 4 h c1 0.17 0.23 f 1.55 2.39 d 4.90 bsc e 6.00 bsc e1 3.90 bsc e e1 d d b ??? ??? ???
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